METHOD OF MAKING SCHOTTKY DIODE AND SCHOTTKY DIODE MADE USING SAID METHOD Russian patent published in 2014 - IPC H01L29/47 H01L21/329 

FIELD: physics.

SUBSTANCE: invention relates to the semiconductor industry, particularly Schottky diodes, and can be used in designing radio frequency identification circuits in scanning microwave range. The method of making a Schottky diode includes forming an N-type region inside a P-type substrate, forming separate silicon dioxide regions on the P-type substrate and an N-pocket region, forming a region with low impurity concentration in the N-pocket region, forming highly doped P+-type regions on the P-type substrate and highly doped N+-type regions in the N-pocket region, cooling the interlayer insulation layer followed by heat treatment, photographic copying of opening windows in the region with low impurity concentration on which a Pt layer is sprayed, followed by heat treatment, etching the Pt layer from regions outside the anode zone of the Schottky diode, opening contact windows to P+-regions and N-regions, spraying a Al+Si layer and performing photolithography on the metal coating followed by heat treatment. The method of making the Schottky diode can be integrated into a basic process of making CMOS microchips.

EFFECT: invention enables to obtain a low-barrier Schottky diode with high-frequency response and high breakdown voltage.

9 cl, 7 dwg