SILICON DIOXIDE-ON-SILICON FILM AND METHOD FOR PRODUCTION THEREOF Russian patent published in 2018 - IPC H01L21/3105 

Abstract RU 2660622 C1

FIELD: chemistry.

SUBSTANCE: use for functional devices. Silicon dioxide-on-silicon film is a two-layer structure consisting, successively, of a layer of porous silicon dioxide and a layer of monolithic silicon dioxide placed on a silicon substrate, wherein the layers have a single chemical composition corresponding to the SiO2 stoichiometry, different geometry of the structural network, which maintains homogeneity within the layer, but changes at the interface of the layers.

EFFECT: ensuring chemical homogeneity throughout the entire volume of the film, as well as obtaining a perfect interface both between the layers and at the Si/SiO2 interface.

5 cl, 3 dwg

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RU 2 660 622 C1

Authors

Loginov Boris Borisovich

Dates

2018-07-06Published

2017-09-19Filed