PRESSURE SENSOR OF INCREASED SENSITIVITY BASED ON NANO- AND MICROELECTROMECHANICAL SYSTEM WITH THIN-FILM RESISTANCE STRAIN GAUGES Russian patent published in 2011 - IPC G01L9/04 B81B7/02 

FIELD: electricity.

SUBSTANCE: pressure sensor of increased sensitivity on the basis of nano- and microelectromechanical system with thin-film resistance strain gauges includes housing, nano- and microelectromechanical system (NMEMS) installed in it and consisting of elastic element - membrane with rigid centre, which is fixed along the outline in support base, heterogeneous structure formed on it of thin films of materials, in which contact platforms are formed. Also, sensor includes the first radial resistance strain gauges from identical resistance strain gauges which are located in one circumferential direction on periphery of membrane. As well, the second radial resistance strain gauges consisting of identical resistance strain gauges, which are located in other circumferential direction on membrane, which are connected by means of thin-film connecting films, which are connected to measuring bridge. At that, radius of rigid centre is determined from the following ratio: R_c=0.18R_m, where R_m - membrane radius. At that, resistance strain gauges of the second radial resistance strain gauges are located in circumferential direction the radius of which is determined from the following ratio: where: r₂(w) - relative radius of location of resistance strain gauges receiving maximum positive radial deformations; w - membrane thickness; m and k- polynomial coefficients; lower index i - index determining polynomial coefficient in correspondence with Table 1; upper index i - power to which variable w is raised.

EFFECT: higher efficiency, accuracy and manufacturability of sensor.

7 dwg, 1 tbl