DEVICE FOR FIXTURE OF CORE-SUBSTRATE IN REACTOR FOR POLY-CRYSTAL SILICON GROWTH Russian patent published in 2010 - IPC C30B25/12 C30B29/06 C30B28/14 

FIELD: metallurgy.

SUBSTANCE: invention refers to production of semi-conducting materials, particularly to production of poly-crystal silicon by means of sedimentation on heated cores-substrates during hydrogen reduction of silicon from chlorine-silane. The device for fixture of cores-substrates 7 in the reactor is equipped with cooled metal current inputs 1 threaded on ends Metal adaptors 2 with axial conic opening 3 narrowing to a lower part are screwed on the current inputs Two graphite conic wedges 4 of taper on external diametre equal to taper of a conic opening of adaptor 2 are installed into axial conic opening 3 Lengthwise slots 5 corresponding to cross section of the core-substrate are made on internal flat surface of graphite conic wedges 4 along the central axis L-shaped metal plates 8 are positioned on opposite facets of slots Height of graphite conic wedges 4 exceeds height of conic opening 3 in adaptor 2.

EFFECT: raised efficiency of reactor due to increased reliability of core-substrate fixture in device and due to reduced intermediate electric contacts between current inputs and cores-substrates; also expanded process functionality of device and elimination of setting cores-substrates in vertical position at lower arrangement of current inputs

3 cl, 2 dwg