INSTALLATION FOR MANUFACTURING POLYCRYSTALLINE SILICON RODS Russian patent published in 1997 - IPC

FIELD: semiconductor materials. SUBSTANCE: invention concerns polycrystalline silicon rods as starting material for growing silicon monocrystals. Installation contains split reactor, vertical mount, container, lifter, component-supply system, and transport carriage. Upper part of reactor is rigidly fastened to vertical mount and its lower part is mobile. Lifter is installed on mount guides and is joined by the aid of lock means with lower part of reactor or with container. Upper part of reactor has current leads with mounting units for carriers. Container has sockets with bottom dampers disposed in accordance with disposition of current leads. To lower part of reactor are ran: component-supply line from component-supply unit and removal line for gas and liquid reaction products. Loading of reactor is performed by way of lifting container with carriers installed in sockets. Operator standing on service platform should install carriers into mounting units on current leads. Then, lower part 8 is set by means of lifter under reactor, lifted, and joined with upper part. Polycrystalline silicon rods are grown by chlorosilane hydrogen reduction technique. Produce is discharged into container sockets. EFFECT: improved design. 3 cl, 5 dwg