DETACHABLE REACTOR FOR RECEIVING OF RODS OF MULTICRYSTALLINE SILICON Russian patent published in 2010 - IPC C30B28/12 C30B29/06 C01B33/35 

FIELD: metallurgy.

SUBSTANCE: invention relates to manufacturing of semiconducting materials, particularly to receiving of initial multicrystalline silicon by sedimentation on heated rods (basis) in process of hydrogen recovery of chlorine silanes. Detachable reactor 1 of installation for receiving of rods for multicrystalline silicon contains top stationary part 2 with located on its top wall by inner and external rows by current feedthrough 6, 9, 13 with attachment fittings 7, 10, 14 U-shaped basis 8, 11, 15, separated from bottom mobile part by horizontal plug, bottom mobile part of reactor, separated by additional horizontal plug on shell 4 and bottom part 5, outfitted by input nipple of gas-vapor mixture of chlorine silanes and hydrogen. Top stationary part 2 of reactor 1 is outfitted by thirty current feedthroughs with attachment fittings of fifteen U-shaped basis, herewith two central current feedthroughs 6 are located on horizontal axis of reactor symmetrically relative to its center, ten current feedthroughs 9 are located by circle of inner row and eighteen current feedthroughs 13 are located by two circles of different diametres in external row, herewith one of the current feedthrough of each U-shaped basis of external row is located by circle of less diametre, shifted to central area of reactor, herewith in bottom part of reactor there are installed seven inlet nipple of gas-vapor mixture of chlorine silanes and hydrogen, two of which are located on its vertical axis, each at a distance from center, equal to half of radius of circle of internal row, and five nipples are located in cross points of rediuses, passing symmetrically between projections on bottom part of adjacent couples of current feedthroughs of inner row, with circle, located between projections on bottom part of circles of internal and external rows, shifted to central area of reactor.

EFFECT: invention provides increasing of efficiency of reactor by means of increasing of direct recovery ratio of silicon from chlorine silanes in hydrogen medium ensured by increasing of amount and density of location in central area of detachable reactor U-shaped silicon basis with its attachment fittings to corresponding current feedthroughs and providing of feeding of fresh gas-vapor mixture to grown rods, located with increased density in central area of rector and in external row.

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