METHOD (VERSIONS) AND DEVICE FOR SILICON SUBSTRATE PRODUCTION Russian patent published in 2014 - IPC C30B15/34 C30B29/06 C30B29/66 C01B33/35 

FIELD: process engineering.

SUBSTANCE: invention relates to production of high-purity long silicon substrates for fabrication of solar batteries. Proposed method is implemented in process reactor including green silicon 1, shaper 4 with hole 5, induction heater 3 that makes silicon melt 2 column above shaper 4 and silicon seed 6 fed into shape hole from below. Note here that oxygen-bearing atmosphere is created in said reactor. Silicon melt is alloyed with oxygen to create oxygen complexes to control specific resistance of silicon substrates 9. At a time with alloying silicon dioxide film 13 is formed on silicon melt 2 surface to increase melt surface tension and to decrease growth angle. Silicon substrates 9 are formed by quartz shaper 4 and cooled by direct dipping in cooling fluid 10, for example, deionised water and/or cooling fluid vapours. Reactor requires no sealing.

EFFECT: production of silicon substrates with adjustable specific resistance, higher stability, accelerated process, lower costs.

28 cl, 6 dwg