FIELD: metallurgy.
SUBSTANCE: invention relates to manufacturing of semiconducting material, particularly to receiving of initial multicrystalline silicon y sedimentation on heated rods (basis) during the process of hydrogen recovery of chlorine silanes. Detachable reactor of installation for receiving of rods for multicrystalline silicon contains top stationary part with located on its top wall with located on its top wall with attachment fittings of basis, installed on vertical stand with formation under rector of loading-unloading area and separated from bottom mobile section by horizontal plug, bottom mobile part of reactor, separated by additional horizontal plug on shell and bottom part, system of power supply and feeding of components. In bottom part under central axis of each U-shaped silicon basis there are located supports, including contained in to sleeves 18 rods 20, installed on springs 19, in top part on rods 20 there are installed through electrical insulating inserts 21 inserts 22 with two platforms 23, located co-axial with axis of rods of U-shaped silicon basis with regulated clearance between its bottom part and platforms, and springs 19 are installed into sleeves 18 in precompressed condition with effort, equal or exceeding weight of grown rods at achievement by them of platforms. Furthermore, on sleeve 18 by thread it is installed female-swivel nut 24, bearing by its bottom into top butt of rod 20, and sleeves 18 are installed in threaded bushes 17, fixed on detachable frame, implemented from connected by ribs two concentric rings, co-axial to located in top stationary part of reactor by current feedthroughs with attachment fittings of basis. Considering special conditions of operation, electrical insulating insertions are implemented from quartz glass, productivity improvement of detachable reactor.
EFFECT: identification in variable range constant values of tensile stress in rods and weight load on attachment fitting of basis after achieving by it of values, not leading to break and fall of rods, that provides increasing of reactor efficiency.
3 cl, 3 dwg
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Authors
Dates
2010-02-27—Published
2008-12-19—Filed