FIELD: physics.
SUBSTANCE: sensor for detecting and/or measuring concentration of electric charges in a medium has a field-effect transistor structure which has a bridge which forms the gate and passes over an active layer which lies between drain and source regions. Gate voltage of given value is applied across the bridge. Between the bridge and the active layer or insulating layer deposited on the active layer there is zone known as an air gap which has a given height. An electric field E is created in the air gap, where strength of the said field is defined as the ratio of voltage across the gate to the height of the air gap. Strength of the electric field created in the air gap has a value equal to or greater than the given threshold value of 50000 V/cm which is sufficient for the electrical field E to have an effect on distribution of electric charges in the medium and the air gap, and ensure high sensitivity of the sensor which is achieved as a result of accumulation of electric charges on the active layer. The surface of the bridge is coated with insulating material.
EFFECT: design of a sensor which is used in a gas or liquid medium and has higher sensitivity.
15 cl, 5 dwg
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Authors
Dates
2010-08-27—Published
2005-07-07—Filed