MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURING Russian patent published in 2015 - IPC H01J37/32 C23C16/27 

FIELD: machine building.

SUBSTANCE: microwave plasma reactor for synthetic diamond manufacturing using chemical precipitation from gas phase includes: microwave generator configured for microwaves generation at f frequency; plasma chamber with base, top plate and side wall from said base to top plate setting the cavity resonator to maintain the microwave resonance mode between the base and top plate; configuration of the microwave link for microwaves supply from the microwave generator to the plasma chamber; gas flow system for process gases supply to the plasma chamber and removal from it; substrate holder installed in the plasma chamber and containing supporting surface to support the substrate; and substrate on the supporting surface. The substrate has growth surface on which the synthetic diamond is precipitated during its use, at that the substrate size and location in the cavity resonator are selected to create profile of the localised axisymmetric electric field Ez across the growth surface during its use. Actually the profile of the localised axisymmetric electric field Ez contains flat central section enclosed by ring of large electric field.

EFFECT: improvement of diamond products homogeneity and hardness.

19 cl, 8 dwg