THIN-FILM PRESSURE SENSOR Russian patent published in 2010 - IPC G01L9/04 

FIELD: physics.

SUBSTANCE: thin-film pressure sensor has a housing, a circular membrane with a peripheral base on which the membrane is attached to a housing. Surrounding and radial tensoresistors connected by thin-film jumpers and connected in opposite arms of a measuring bridge are made in form of tensoelements arranged in a circle on the periphery of the membrane. The thin-film jumpers are partially closed by extra jumpers. The distance between the inner surface of the housing and the outer surface of the peripheral base in area where the tensoresistors are located and dimensions of the peripheral base are linked by a corresponding relationship. The joint between the peripheral base and the housing is in the area between the sealing surface of the peripheral base and the maximum external diametre of the housing. The maximum diametre of the outer surface of the peripheral base in the area of the joint with the housing is equal to the maximum diametre of the sealing surface of the peripheral base. Part of the peripheral base lies between the area of the joint between the peripheral base and the housing and the area of the maximum external diametre of the housing.

EFFECT: reduced measurement errors under unsteady ambient temperature and high vibration accleleration due to lower temperature difference between tensoresistors and thermoelectric non-uniformities.

2 cl, 2 dwg