METHOD OF MAKING THIN-FILM PRESSURE SENSOR Russian patent published in 2011 - IPC G01L9/00 

FIELD: physics.

SUBSTANCE: method of making a thin-film pressure sensor involves making a membrane with a perforated base in form of a rotational shell, polishing the surface of the membrane, forming a dielectric film on said membrane and tenso-elements with low-resistance jumpers and contact pads in between and removing residual stress in the material of the membrane. Tenso-elements are formed using a template of a strain-sensitive layer, having the configuration of tenso-elements in areas superposed with the low-resistance jumpers and contact pads in form of stripes, comprising images of tenso-elements and their continuation in two opposite directions, and in areas superposed with contact pads - partially coinciding with the configuration of contact pads and areas away from the stripes. The length of the stripes and the distance from the stripes to areas away from the stripes is selected based on corresponding mathematical expressions. Leads are connected to contact pads in regions away from the stripes and residual stress is removed.

EFFECT: low measurement error under non-steady temperature and high vibration acceleration, high manufacturability, stability and service life and storageability time of sensors.

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