METHOD TO MANUFACTURE HIGHLY STABLE PRESSURE SENSOR BASED ON THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM Russian patent published in 2013 - IPC G01L9/04 B82B1/00 

FIELD: measurement equipment.

SUBSTANCE: method to manufacture a highly stable pressure sensor based on thin-film nano- and microelectric systems (NiMEMS) consists in the fact that after connection of output conductors to contact sites prior to sealing of strain-elements with links and contact sites, they are exposed until total perception to test lower and higher temperatures, values of which by absolute values are accordingly equal to at least maximum permissible lower and higher temperature in process of sensor operation. Resistances of strain resistors are measured under acting temperatures. Temperature coefficients of strain resistors are determined in the range of acting temperatures. On their basis they calculate the criterion of time stability according to the ratio Ψ_τα=(R₂α₂R₄α₄-R₁α₁R₂α₃)(R²α)^-1, where R₁, R₂, R₃, R₄ - resistance of accordingly the first, second, third, fourth strain resistor of NiMEMS under normal climatic conditions; α₁, α₂, α₃, α₄ - temperature coefficient of resistance of accordingly the first, second, third, fourth strain resistor of NiMEMS; R=0.25(R₁+R₂+R₃+R₄); α=0.25(α₁+α₂+α₃+α₄). If Ψ_τα>Ψ_ταΔ where Ψ_ταΔ - limit permissible value of time stability criterion, which is determined experimentally by statistical data for a specific dimension type of the sensor, than this assembly is written off as process scrap.

EFFECT: method improvement.

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