ULTRAVIOLET NITRIDE HETEROSTRUCTURE LIGHT-EMITTING DIODE Russian patent published in 2014 - IPC H01L33/32 B82B1/00 

FIELD: chemistry.

SUBSTANCE: ultraviolet nitride heterostructure light-emitting diode includes metal electrodes of p-type, a nitride layer of a p-type, a III-nitride active area, a III-nitride layer of an n-type, a sapphire substrate with a textured semi-polar or non-polar surface of the III-nitride layer. The textured surface of the semi-polar or non-polar plane of the III-nitride layer is made in the form of a brush of nanotubes, dimensions of which and a distance between which are comparable with a radiation wavelength.

EFFECT: invention makes it possible to increase an external quantum output of the device due to creation of the textured surface with an increased output of radiation of such a type that it makes it possible to put out a large light flow without creation of undesirable polarisation, considerably reduce internal reflection, improve efficiency of the carrier recombination.

4 cl, 1 dwg