AVALANCHE PHOTODIODE Russian patent published in 2010 - IPC H01L31/107 

FIELD: physics.

SUBSTANCE: avalanche photodiode has a germanium- and silicon-based absorbing layer, a multiplier layer made from silicon, a first under-contact layer made from doped silicon adjacent to the multiplier layer and a second under-contact layer made from doped silicon adjacent to the absorbing layer. The absorbing layer is made from doped silicon with nanosized inclusions of a solid Ge_xSi_1-x(x≥0.5) solution, where the solid solution and silicon in the absorbing layer have the same type of conductivity. The absorbing layer is adjacent to the multiplier layer made from doped silicon, whose type of conductivity differs from that of the absorbing layer. Concentration of the dopant in the multiplier layer is less than concentration of the dopant in the absorbing layer.

EFFECT: wider operating spectral range of the photodiode in the near infrared region with improvement of quantum efficiency and electrical characteristics of the photodiode and simplification of its design.

5 cl, 4 dwg