FIELD: physics.
SUBSTANCE: invention relates to solar power engineering and specifically to methods of making photoconverters for space applications on three-stage GaInP/Ga(In)As/Ge epitaxial structures. Method of making a photoconverter for spacecraft involves forming, on a germanium substrate with three-cascade structure of grown on epitaxial layers, face and rear contacts based on silver; mesa isolation formation; annealing of contacts; straightening metallised substrate by cooling in nitrogen vapours; disk cutting of epitaxial structure; opening of optical window by etching; spraying an antireflection coating containing layers of TiO2 and Al2O3, electron-beam method without application of plasma; chemical-dynamic etching of the antireflection coating in a solution of tetramethylammonium hydroxide, hydrogen peroxide and water; rectification of photoconverter by cooling in nitrogen vapours; chemical-dynamic etching of cutting areas of germanium substrate with simultaneous opening of optical window; spraying of the antireflection coating from successive TiO2, ZrO2, Al2O3 layers, wherein the thickness of ZrO2 layer is selected in range of 7÷20 nm, in addition, disk cutting is performed with separation of segments of epitaxial structure from vertical and horizontal sides of chips, and after chemical-dynamic etching of the antireflective coating segments of the epitaxial structure are separated from chamfer faces.
EFFECT: technical result of invention: possibility of making photoconverter for spacecraft with high electrical parameters and high output of usable photoconverters.
1 cl, 10 dwg
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Authors
Dates
2021-01-28—Published
2020-03-10—Filed