FIELD: physics.
SUBSTANCE: blocking diode for spacecraft solar panels has a silicon chip with a planar p-n junction, an ohmic contact to a p-type region between the emitter region and the field lining of the silicon chip, an ohmic contact to the n-type region between the base region and the field lining of the silicon chip, first and second leads lying parallel to the front and back planes of the silicon chip, first and second compensators lying between the first and second leads and the silicon chip.
EFFECT: design of an uncased blocking diode for spacecraft solar panels with high breakdown voltage and low forward voltage, stable during thermal cycles in a wide temperature range and whose dielectric insulation is protected from the effect of alkali metals.
7 cl, 2 dwg
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Authors
Dates
2012-07-27—Published
2011-04-06—Filed