BLOCKING DIODE FOR SPACECRAFT SOLAR PANELS Russian patent published in 2012 - IPC H01L29/861 

Abstract RU 2457578 C1

FIELD: physics.

SUBSTANCE: blocking diode for spacecraft solar panels has a silicon chip with a planar p-n junction, an ohmic contact to a p-type region between the emitter region and the field lining of the silicon chip, an ohmic contact to the n-type region between the base region and the field lining of the silicon chip, first and second leads lying parallel to the front and back planes of the silicon chip, first and second compensators lying between the first and second leads and the silicon chip.

EFFECT: design of an uncased blocking diode for spacecraft solar panels with high breakdown voltage and low forward voltage, stable during thermal cycles in a wide temperature range and whose dielectric insulation is protected from the effect of alkali metals.

7 cl, 2 dwg

Similar patents RU2457578C1

Title Year Author Number
SHF HIGH-POWER TRANSISTOR WITH MULTILAYER EPITAXIAL STRUCTURE 2012
  • Avetisjan Grachik Khachaturovich
  • Adonin Aleksej Sergeevich
  • Darofeev Aleksej Anatol'Evich
  • Kolkovskij Jurij Vladimirovich
  • Kurmachev Viktor Alekseevich
  • Minnebaev Vadim Minkhatovich
RU2519054C1
METHOD TO MANUFACTURE SHUNTING DIODE FOR SOLAR BATTERIES OF SPACECRAFTS 2011
  • Basovskij Andrej Andreevich
  • Zhukov Andrej Aleksandrovich
  • Didyk Pavel Igorevich
  • Anurova Ljubov' Vladimirovna
RU2479888C1
HIGH-POWER SHF TRANSISTOR 2012
  • Avetisjan Grachik Khachaturovich
  • Adonin Aleksej Sergeevich
  • Darofeev Aleksej Anatol'Evich
  • Kolkovskij Jurij Vladimirovich
  • Kurmachev Viktor Alekseevich
  • Minnebaev Vadim Minkhatovich
RU2519055C1
SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURING 2012
  • Avetisjan Grachik Khachaturovich
  • Gladysheva Nadezhda Borisovna
  • Dorofeev Aleksej Anatol'Evich
  • Kurmachev Viktor Alekseevich
RU2507634C1
HETEROSTRUCTURE MODULATED-DOPED FIELD-EFFECT TRANSISTOR 2013
  • Avetisjan Grachik Khachaturovich
  • Dorofeev Aleksej Anatol'Evich
  • Kolkovskij Jurij Vladimirovich
  • Minnebaev Vadim Minkhatovich
RU2534437C1
METHOD FOR MANUFACTURE OF POWERFUL SHF TRANSISTOR 2013
  • Avetisjan Grachik Khachaturovich
  • Adonin Aleksej Sergeevich
  • Kolkovskij Jurij Vladimirovich
  • Kurmachev Viktor Alekseevich
  • Minnebaev Vadim Minkhatovich
RU2534442C1
SILICONE DIODE WITH SCHOTTKY BARRIER JUNCTION AND METHOD OF ITS MANUFACTURING 2014
  • Filatov Mikhail Jur'Evich
  • Drenin Andrej Sergeevich
  • Rogovskij Evgenij Stanislavovich
RU2550374C1
METHOD OF MANUFACTURING OPEN FRAME DIODE FOR SOLAR CELLS OF SPACE VEHICLES 2017
  • Kharitonov Vladimir Anatolevich
  • Anurova Lyubov Vladimirovna
  • Basovskij Andrej Andreevich
  • Zhukov Andrej Aleksandrovich
  • Didyk Pavel Igorevich
RU2656126C1
METHOD OF MANUFACTURING INSULATION FOR ELEMENT OF INTEGRATED CIRCUITS 1982
  • Manzha N.M.
  • Jachmenev V.V.
  • Kokin V.N.
  • Sulimin A.D.
  • Shurchkov I.O.
SU1111634A1
HEAVY-DUTY PSEUDOMORPHIC SHF SWITCH 2014
  • Avetisjan Grachik Khachaturovich
  • Adonin Aleksej Sergeevich
  • Kolkovskij Jurij Vladimirovich
  • Minnebaev Vadim Minkhatovich
RU2574808C2

RU 2 457 578 C1

Authors

Basovskij Andrej Andreevich

Zhukov Andrej Aleksandrovich

Kharitonov Vladimir Anatol'Evich

Anurova Ljubov' Vladimirovna

Dates

2012-07-27Published

2011-04-06Filed