SCHOTTKY-BARRIER RECTIFIER DIODE (ALTERNATIVES) Russian patent published in 2001 - IPC

FIELD: electronic engineering. SUBSTANCE: first alternative is characterized in that ohmic contact of diode is made in the form of metal monocrystal with space- or face-centered grating, with faces 111 or 100, its melting point being higher than that of silicon; grown on its outer surface is cylindrical n⁺ silicon substrate whose outer surface carries active cylindrical n-type silicon layer with multilayer metal contact in the form of two cylindrical layers of desired length made of different metals and deposited on the latter; in this way cylindrical Schottky barrier is formed; electric conductivity of upper coupled cylindrical metal layer is higher than that of lower cylindrical metal layer where current flows through Schottky barrier. Second alternative is distinguished by that n⁺ silicon substrate of diode is grown in the form of hollow cylinder. Third alternative differs from the former ones in that n⁺ silicon substrate of diode is grown in the form of solid cylinder of desired length. EFFECT: eliminated edge effect, enhanced breakdown voltage, reduced electrothermal degradation, improved stability of performance characteristics. 9 cl, 3 dwg