TRANSIT-TIME MICROWAVE DIODE (DESIGN VERSIONS) Russian patent published in 2001 - IPC

FIELD: electronic engineering; microwave oscillators and amplifiers. SUBSTANCE: transit-time microwave diode of first design version has its first metal contact made in the form of single-crystal nonmagnetic metal cylinder with body-centered or face-centered lattice incorporating faces 111 or 100, its melting temperature being higher than that of silicon. Grown on its external surface is cylinder- shaped degenerated single-crystal silicon n layer carrying cylinder- shaped active single-crystal silicon n layer and degenerated single- crystal silicon p⁺ layer both formed thereon sequentially. Second metal contact in the form of two cylindrical layers of desired length is applied overall; these cylinders are made of different nonmagnetic metals. Electric conductivity of upper cylindrical metal layer of pair is higher than that of lower metal layer along current flow. Three design versions of this diode are proposed. EFFECT: suppressed end effect, increased microwave oscillator power, reduced electrothermal degradation. 9 cl, 3 dwg