METHOD OF FORMING CONTACT DRAWING FROM NICKEL ON SILICON WAFERS Russian patent published in 2011 - IPC H01L31/18 H01L21/285 

FIELD: physics.

SUBSTANCE: method of forming contact drawing from nickel on silicon wafers involves formation of a dielectric film with windows, chemical deposition of nickel in said windows and formation of a nickel silicide interlayer from the gas phase during thermal decomposition of nickel tetracarbonyl vapour at temperature 200-300°C, pressure in the system of (1-10)-10^-1 mm Hg and rate of supplying nickel tetracarbonyl vapour equal to 0.5-2 ml/min per dm² of the covering surface. The nickel layer is then removed up to the nickel silicide layer through chemical etching and nickel is deposited via chemical deposition onto the nickel silicide interlayer in the window of the dielectric film.

EFFECT: invention enables formation of a transparent contact for an electroconductive layer based on nickel with low ohmic resistance, independent of the type of conductivity and degree of doping of the silicon surface.

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