METHOD OF CONTINUOUS MONOSILANE PRODUCTION Russian patent published in 2011 - IPC C01B33/04 

Abstract RU 2414421 C2

FIELD: process engineering.

SUBSTANCE: invention can be used in production of semiconductor silicon. Monosilane is produced from silicon halogenid and metal hydride at their stoichiometric ratio in liquid reaction medium in one vertical reaction column divided, over height, into reaction zones by contact devices that allow contact between gas and fluid. Initial metal hydride 2 is introduced into column top, while initial silicon halogenid is fed into column bottom to above fluid layer. Produced silane 3 is withdrawn from column top while produced metal halogenid 4 withdrawn from column bottom. Colum is cooled by external flow of coolant. Heat release is controlled while feed is reagents is adjusted in compliance with heat release. Process is conducted at atmospheric pressure and 10-110 °C.

EFFECT: large-volume production of monosilane in column-type plants.

35 cl, 1 dwg, 2 ex

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Authors

Endovin Jurij Petrovich

Pererva Oleg Valentinovich

Chekrij Elena Nikolaevna

Storozhenko Pavel Arkad'Evich

Polivanov Aleksandr Nikolaevich

Kang Geng Khun

Dates

2011-03-20Published

2009-05-07Filed