QUARTZ-ON-SILICON PLATE FOR PRODUCING BACKLIT PHOTODETECTOR SEMICONDUCTOR APPARATUS, PHOTODETECTOR SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURE THEREOF Russian patent published in 2023 - IPC H01L31/18 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to the field of manufacturing photodetector semiconductor instruments working in a broad wavelength range. Plate for manufacturing at least one semiconductor photodetector instrument, configured to backlight said instrument, comprises a silicon substrate containing the main silicon part and an epitaxial silicon layer made on the main silicon part, also comprises a quartz layer formed on the front surface of the epitaxial layer, and the back side of the epitaxial silicon layer is configured for at least one semiconductor photodetector instrument to be formed thereon after mechanical and chemical thinning of the plate on the side of the main silicon part. Also proposed are a method for manufacturing a semiconductor photodetector instrument and a photodetector instrument made on the proposed plate and/or manufactured by the proposed method.

EFFECT: high sensitivity of photodetector instruments in a broad wavelength range, as well as mechanical strength; technology for producing such devices also becomes simpler, resources and time are conserved, leading to the economic efficiency thereof.

10 cl, 8 dwg