MANUFACTURING METHOD OF DIELECTRIC FILM FOR SEMICONDUCTOR STRUCTURES OF ELECTRONIC EQUIPMENT Russian patent published in 2011 - IPC H01L21/31 

FIELD: electricity.

SUBSTANCE: in manufacturing method of dielectric film for semiconductor structure of electronic equipment, which involves formation of at least one layer of the specified dielectric material of film by means of plasma chemical deposition with specified auto offset mode, prior to plasma chemical deposition of the above - of the main layer of specified dielectric material of film there formed is additional layer from dielectric material - silicon dioxide with thickness equal to 0.01-0.15 mcm by means of chemical deposition from gaseous mixture of monosilane and oxygen; at that, chemical and plasma chemical deposition of dielectric material of each of film layers - additional and the main - is performed at temperature of 80-180°C.

EFFECT: maintaining characteristics of semiconductor structures by maximum possible exclusion of damage of semiconductor structure in manufacturing process of dielectric film, enlarging functional capabilities and simplifying the method at maintaining characteristics of dielectric film itself.

6 cl, 4 dwg, 1 tbl