METHOD FOR MANUFACTURING MONOLITHIC MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2023 - IPC H01L21/77 

FIELD: integrated circuits.

SUBSTANCE: method according to the invention includes the sequential formation of integrated circuit elements on the front side of the semiconductor substrate by means of appropriate processes of thin-film technology, the formation of integrated circuit grounding elements on the back side of the semiconductor substrate, from through holes and metallization coatings on the surface of the walls of through holes and the free surface of the semiconductor substrate, providing grounding of each of the specified active and passive elements, whereas through holes are formed through by plasma-chemical etching in two stages, at the first stage in a mixture of gases: chlorine Cl₂ and boron trichloride BCl₃, with the following ratio in the gas mixture, vol.% 8:3 respectively, at temperatures less than 100°C, pressure 4-5.3 Pa, capacitive plasma power 15-25 W, inductive plasma power 850-1000 W, and at the second stage in a mixture of chlorine Cl₂ and boron trichloride BCl₃, with the following ratio in the gas mixture, vol.% 2:1 respectively, at temperatures less than 100° C, pressure 4.7-6 Pa, capacitive plasma power 20-30 W, inductive plasma power 900-1000 W, immediately before the formation of the metallization coating, a layer of a sequence of components is additionally formed on the surface of the walls of through holes and the free surface of the semiconductor substrate: titanium Ti, gold Au, thickness 50-100 nm, 300-500 nm respectively through magnetron sputtering process.

EFFECT: increased gain, expanded operating frequency band, increased reproducibility and reliability.

5 cl, 3 dwg