METHOD FOR MANUFACTURING MICROWAVE FIELD-EFFECT TRANSISTOR Russian patent published in 2023 - IPC H01L21/335 H01L29/772 

FIELD: semiconductor devices.

SUBSTANCE: method for manufacturing microwave field-effect transistors includes forming at least two field-effect transistor crystals on the front side of a semiconductor substrate through technological operations of electronic and photolithography, forming field-effect transistor electrodes - source, gate, drain - by applying a given system of metal layers, respectively, forming a passivating layer from a given material, of a given thickness, dividing the semiconductor substrate into individual field-effect transistor crystals through chemical etching. Moreover, according to the invention, separation of the semiconductor substrate into individual field-effect transistor crystals is carried out by plasma-chemical etching in a mixture of gases - BCl₃, Cl₂, and Ar at the following ratio of their gas flows (6.4-9.6)×10^-8, (24-40)×10^-8, (11.2-20.8)×10^-8 m³/s, respectively, at a temperature of 20-100°C, pressure of 8-12 mTorr, capacitive plasma power of 4-6 W, and inductive plasma power of 400-500 W.

EFFECT: increased reproducibility of design parameters of field-effect transistors and, accordingly, increased yield of suitable microwave field-effect transistors while maintaining output power.

4 cl, 2 dwg