METHOD OF MANUFACTURING MONOLITHIC MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2025 - IPC H01L21/70 H01L21/77 

FIELD: electricity.

SUBSTANCE: invention relates to the technology of manufacturing microelectronic devices. Method of manufacturing a monolithic integrated circuit of the microwave range includes forming on the front side of the semiconductor substrate a part of active and passive elements, thinning of semiconductor substrate from reverse side to required thickness in two stages, formation of other part of elements on reverse side of semiconductor substrate, formation of through holes by means of plasma-chemical etching in two stages, formation of metal coating on surface of walls of through holes and free surface of semiconductor substrate. Thinning of the semiconductor substrate from the back side in two steps: at first stage, mechanical grinding is carried out with grinding powder based on aluminium oxide Al₂O₃, and at the second stage – chemical-mechanical polishing with a polishing suspension containing titanium dioxide, sodium hypochlorite and deionised water.

EFFECT: reducing the cost of the technological process of the method of making a monolithic microwave integrated circuit while maintaining the required values of electrophysical parameters.

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