FIELD: machine building.
SUBSTANCE: procedure consists in surface ion-plasma etching through holes in pattern mask preliminary laid over treated surface. A shielding mask with holes is arranged on surface of the pattern mask. During etching holes of the pattern mask are periodically overlapped with ends of the shielding mask by transferring the shielding mask counter or clockwise at angle multiple to an interval of gas-dynamic grooves layout on friction surface. Further, both masks are transferred in one direction at angle corresponding to an angular pitch of gas-dynamic layout on surface of friction; and ion-plasma etching is repeated. The devise is equipped with a mechanism for transfer of the shielding mask relative to the pattern mask. Contours of the holes of the shielding mask are made with different radius of curvature. The mechanism for transfer of the shielding mask imparts it with reciprocating-swinging motion at the above said angle.
EFFECT: obtaining grooves with inclined bottom by width of groove in tangential direction and grooves with inclined bottom by width of groove in tangential and radial direction.
2 cl, 18 dwg
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Authors
Dates
2011-06-20—Published
2009-04-06—Filed