FIELD: machine building.
SUBSTANCE: flange and support with hemispherical opposed working surfaces are shaped. Ion-beam etching is used to produce aerodynamic profile at support working surface of diameter D as grooves of equivalent spherical helical lines. Variable depth in groove cross-section is defined by monotone increase in thickness of mask element with cut-outs in direction from connector to support pole. Variable depth in groove cross-section is ensured by making the mask second element as a fixed shield perpendicular to ion flow axis.
EFFECT: high quality and precision of bearing and its aerodynamic profile.
3 dwg
Title | Year | Author | Number |
---|---|---|---|
PROCEDURE FOR OBTAINING GAS-DYNAMIC GROOVES AND DEVICE FOR ITS IMPLEMENTATION | 2009 |
|
RU2421845C2 |
SPUTTERING UNIT OF COATINGS ONTO PRECISION PARTS OF ASSEMBLIES OF GYROSCOPIC INSTRUMENTS | 2012 |
|
RU2507306C1 |
DEVICE FOR SPATTERING OF THIN FILM COATINGS ON SPHERICAL ROTOR OF ELECTROSTATIC GYROSCOPE | 2014 |
|
RU2555699C1 |
PRODUCTION METHOD FOR NANOWIRE CATALYST | 2015 |
|
RU2609788C1 |
DYNAMICALLY ADJUSTABLE GYROSCOPE | 2004 |
|
RU2248524C1 |
TURBOJET ENGINE LOW-PRESSURE COMPRESSOR FIRST STAGE ROTOR IMPELLER (VERSIONS) | 2015 |
|
RU2603382C1 |
NANOELECTROMECHANICAL RESONATOR AND METHOD FOR ITS MANUFACTURE | 2022 |
|
RU2808137C1 |
SUPPORT AND DRIVE DEVICE | 1999 |
|
RU2193703C2 |
HIGH-SPEED THRUST BEARING | 2005 |
|
RU2301361C1 |
METHOD FOR COMPENSATING FOR INHOMOGENEITY OF THE ETCHING OF SILICON JUMPERS OVER CHIP (OPTIONS) AND SILICON WAFER WITH DISTRIBUTION OF CHIPS ACCORDING TO THIS METHOD (OPTIONS) | 2020 |
|
RU2748050C1 |
Authors
Dates
2014-05-27—Published
2013-02-26—Filed