METHOD FOR PASSIVATING GaAs LASERS BY ELECTRON-BEAM EVAPORATION WITH ION ASSISTANCE Russian patent published in 2024 - IPC H01S5/28 

FIELD: optics.

SUBSTANCE: invention relates to a method of protecting laser diode resonator mirrors using passivating coatings. Method for passivating GaAs lasers by electron-beam evaporation with ion assistance comprising steps, on which the GaAs-based laser heterostructure is divided into lines or crystals of laser diodes in the external atmosphere, providing cleaved faces of the resonator, then, on the outer face of the resonator, a silicon layer with thickness of 2 to 3 nm is deposited by electron-beam evaporation, then the surface is nitridated with nitrogen ions, providing a silicon layer with thickness of 1.2 nm to 1.5 nm and a layer of Si₃N₄ also with thickness of 1.2 nm to 1.5 nm, then an antireflection coating of Al₂O₃ is sputtered.

EFFECT: increased optical strength of output mirrors and service life.

1 cl, 2 dwg