METHOD OF REMOVING PHOSPHORUS FLUORIDE VOLATILE IMPURITIES FROM SILICON TETRAFLUORIDE Russian patent published in 2011 - IPC C01B33/107 

Abstract RU 2422359 C1

FIELD: chemistry.

SUBSTANCE: invention can be used in the of polycrystalline silicon. Silicon tetrafluoride and volatile phosphorus fluorides undergo combined sorption on sodium fluoride at temperature 200-250°C. Water vapour is fed at temperature 450-550°C, and purified silicon tetrafluoride is desorbed and condensed.

EFFECT: invention enables to obtain silicon tetrafluoride with purity of up to 99,7%.

1 tbl, 1 ex

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RU 2 422 359 C1

Authors

Gromov Oleg Borisovich

Rybakov Anatolij Georgievich

Gurdina Ekaterina Leonidovna

Dates

2011-06-27Published

2009-12-14Filed