FIELD: chemistry.
SUBSTANCE: invention can be used in the of polycrystalline silicon. Silicon tetrafluoride and volatile phosphorus fluorides undergo combined sorption on sodium fluoride at temperature 200-250°C. Water vapour is fed at temperature 450-550°C, and purified silicon tetrafluoride is desorbed and condensed.
EFFECT: invention enables to obtain silicon tetrafluoride with purity of up to 99,7%.
1 tbl, 1 ex
Title | Year | Author | Number |
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METHOD OF PRODUCING HIGHLY PURE SILICON TETRAFLUORIDE | 2009 |
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Authors
Dates
2011-06-27—Published
2009-12-14—Filed