NANO-SEMICONDUCTOR GAS SENSOR Russian patent published in 2011 - IPC G01N27/22 B82B1/00 

Abstract RU 2422811 C1

FIELD: chemistry.

SUBSTANCE: sensor has a semiconductor base and a substrate. The semiconductor base is made from a nano-sized film of cadmium telluride doped with zinc selenide. The electrode platform of a piezoelectric crystal resonator serves as the substrate.

EFFECT: high sensitivity of the sensor and its manufacturability.

1 dwg

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RU 2 422 811 C1

Authors

Kirovskaja Iraida Alekseevna

Podgornyj Stanislav Olegovich

Dates

2011-06-27Published

2010-02-08Filed