NANO-SEMICONDUCTOR GAS ANALYSER Russian patent published in 2011 - IPC G01N27/12 B82B1/00 

Abstract RU 2423688 C1

FIELD: chemistry.

SUBSTANCE: semiconductor base is made from a nanosized film of gallium antimonide doped with zinc telluride. The electrode platform of a piezoelectric crystal resonator serves as the substrate.

EFFECT: high sensitivity of the sensor and its manufacturability.

1 dwg

Similar patents RU2423688C1

Title Year Author Number
SEMICONDUCTOR GAS ANALYSER 2009
  • Kirovskaja Iraida Alekseevna
  • Shubenkova Ekaterina Garr'Evna
RU2398219C1
GAS ANALYSER OF CARBON OXIDE 2009
  • Kirovskaja Iraida Alekseevna
  • Novgorodtseva Ljubov' Vladimirovna
  • Vasina Marina Vladimirovna
RU2395799C1
SEMICONDUCTOR AMMONIA TRACE CONTAMINATION SENSOR 2015
  • Kirovskaya Iraida Alekseevna
  • Novgorodtseva Lyubov Vladimirovna
RU2589455C1
SEMICONDUCTOR GAS SENSOR OF AMMONIA TRACE IMPURITIES 2015
  • Kirovskaya Iraida Alekseevna
  • Mironova Elena Valerevna
RU2607733C1
SEMICONDUCTOR GAS SENSOR OF TRACE OXYGEN MICRO IMPURITIES 2019
  • Kirovskaya Iraida Alekseevna
  • Novgorodtseva Lyubov Vladimirovna
  • Ekkert Alisa Olegovna
  • Ekkert Robert Vladimirovich
RU2710523C1
SEMICONDUCTOR GAS SENSOR OF TRACE IMPURITIES OF OXYGEN 2015
  • Kirovskaja Irina Alekseevna
  • Novgorodtseva Ljubov Vladimirovna
RU2603337C1
SEMICONDUCTOR GAS ANALYSER 2011
  • Kirovskaja Iraida Alekseevna
  • Dubina Oksana Nikolaevna
RU2469300C1
NANO-SEMICONDUCTOR GAS SENSOR 2010
  • Kirovskaja Iraida Alekseevna
  • Podgornyj Stanislav Olegovich
RU2422811C1
SEMICONDUCTING GAS ANALYSER 2007
  • Kirovskaja Iraida Alekseevna
  • Filatova Tat'Jana Nikolaevna
RU2350936C1
SEMICONDUCTOR SENSOR OF AMMONIA TRACE SUBSTANCES 2016
  • Kirovskaya Iraida Alekseevna
  • Novgorodtseva Lyubov Vladimirovna
RU2641016C2

RU 2 423 688 C1

Authors

Kirovskaja Iraida Alekseevna

Novgorodtseva Ljubov' Vladimirovna

Dates

2011-07-10Published

2010-02-08Filed