FIELD: electricity.
SUBSTANCE: substrates cleaning with plasma etching is carried out on a plasma discharge plant, comprising a cathode source of electrons (5) and an anode structure (7). The anode structure (7) comprises, at one side, an anode electrode (9), and on the other side, a limiter (11), which is electrically isolated from it. The limiter (11) has a hole (13), directed towards the area (S) of the substrate (21) to be cleaned. Power supply to a cathode source of electrons (5) and an anode electrode (9) is sent via a supply circuit from a source of supply (19). The circuit is controlled in electric buffer mode.
EFFECT: provision of higher density of plasma etching directly near the cleaned area of the substrate and achievement of improved even cleaning both inside reliefs and of protruding parts on the considered area of the surface.
44 cl, 10 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHODS USING REMOTE ARC DISCHARGE PLASMA | 2013 |
|
RU2640505C2 |
| PLASMA-IMMERSION ION TREATMENT AND DEPOSITION OF COATINGS FROM VAPOUR PHASE WITH HELP OF LOW-PRESSURE ARC DISCHARGE | 2014 |
|
RU2695685C2 |
| LOW PRESSURE ARC PLASMA IMMERSION COATING VAPOUR DEPOSITION AND ION TREATMENT | 2014 |
|
RU2662912C2 |
| METHOD TO MANUFACTURE PROCESSED SURFACE AND VACUUM SOURCES OF PLASMA | 2007 |
|
RU2479885C2 |
| VACUUM TREATMENT PLANT AND METHOD OF VACUUM TREATMENT | 2008 |
|
RU2472869C2 |
| GAS-DISCHARGE SPUTTERING APPARATUS BASED ON PLANAR MAGNETRON WITH ION SOURCE | 2020 |
|
RU2752334C1 |
| CATHODE FOR SPRAYING OR ELECTRIC-ARC EVAPORATION (ALTERNATIVES) AND DEVICE FOR COATING OR ION-BEAM IMPLANTATION OF SUBSTRATES | 1998 |
|
RU2168233C2 |
| METHOD OF PRODUCING DIAMOND-LIKE CARBON AND DEVICE TO THIS END | 2013 |
|
RU2567770C2 |
| FILTERED VACUUM ARC PLASMA SOURCE | 2004 |
|
RU2369664C2 |
| PRODUCTION OF ELECTRIC-ARC PLASMA IN CURVILINEAR PLASMA GUIDE AND APPLICATION OF COATING ON SUPPORTING STRUCTURE | 1997 |
|
RU2173911C2 |
