PROCEDURE FOR FABRICATION AND DEVICE FOR FABRICATION OF PLASMA INDICATOR PANEL Russian patent published in 2011 - IPC C23C14/24 C23C14/08 H01J9/02 

Abstract RU 2425174 C2

FIELD: metallurgy.

SUBSTANCE: according to invention panel consists of front substrate containing scanning electrode, supporting electrode, dielectric layer and protective layer and of back substrate containing address electrode, barrier ribs and fluorescent material applied on internal walls of grooves formed with barrier ribs. The procedure consists in generation of film MgO with orientation (111) by sedimentation method from the vapour phase with rate of sedimentation amounting to 280 Ǻ /sec or more and at temperature of substrate of 120°C or less.

EFFECT: simplified production process, facilitating fabrication of layer MgO with orientation due to reduced temperature of sedimentation.

6 cl, 24 dwg

Similar patents RU2425174C2

Title Year Author Number
PLASMA DISPLAY PANEL AND METHOD OF MAKING SAID PANEL 2007
  • Fukui Jusuke
  • Terauti Masakharu
  • Tsudzita Takudzi
RU2398306C1
VACUUM PROCESSING DEVICE 2007
  • Iidzima Ehjiti
  • Masuda Jukio
  • Iso Josiki
  • Khakomori Muneto
RU2421543C2
METHOD OF CONTROLLING FOCUSING OF ELECTRON BEAM OF PIERCE TYPE ELECTRON GUN AND CONTROL DEVICE 2007
  • Iidzima Ehjiti
  • Shehn' Guo Khua
  • Satake Tokhru
RU2449409C2
TIGHT PANEL AND METHOD FOR PRODUCTION OF PLASMA INDICATOR PANEL 2007
  • Kurauti Tosikharu
  • Iidzima Ehjiti
RU2395863C2
METHOD AND APPARATUS FOR MAKING PLASMA DISPLAY PANEL 2008
  • Iidzima Ehjiti
  • Khakomori Muneto
  • Nakatuka Masato
  • Kurauti Tosikharu
RU2441297C2
METHOD OF PRODUCING THIN EPITAXIAL LAYERS OF β-SIC ON MONOCRYSTALLINE SILICON 2013
  • Kargin Nikolaj Ivanovich
  • Gusev Aleksandr Sergeevich
  • Ryndja Sergej Mikhajlovich
  • Zenkevich Andrej Vladimirovich
  • Pavlova Elena Pavlovna
RU2524509C1
NIOBIUM-NICKEL-TITANIUM ALLOY BARRIER FOR COATINGS WITH LOW EMISSIVITY 2016
  • Chzhan Gujchzhen
  • Syuj Yunli
  • Van Yuj
  • Ven Sun Chzhi-Ven
  • Shvajgert Daniel
  • Le Minkh Khuu
  • Lao Tszinyuj
  • Imran Mukhammad
  • Chen Dzheremi
  • Bojs Brent
  • Din Goven
RU2721607C2
METHOD OF FORMING INSULATING LAYER USING LOW-ENERGY PARTICLES 2009
  • Majkl Kolle
  • Ouejn Llir Parri
  • Dejvid Sparrou
  • Oleg Jaroshchuk
  • Judzhin Telesh
RU2522440C2
METHOD OF MAKING THIN CRYSTAL SILICON FILMS FOR SEMICONDUCTOR DEVICES 2006
  • Milovzorov Dmitrij Evgen'Evich
RU2333567C2
SILICON-ON-GLASS HETEROSTRUCTURE AND ITS PRODUCTION PROCESS 1994
  • Velichko Aleksandr Andreevich
RU2084987C1

RU 2 425 174 C2

Authors

Iidzima Ehjiti

Khakomori Muneto

Dates

2011-07-27Published

2007-10-18Filed