FIELD: nanotechnologies.
SUBSTANCE: proposed method comprises making first sacrificial layer on substrate, producing second sacrificial layer on said first layer to apply photoresist thereon and make window therein. It comprises also etching fist and second layers to substrate in said window. Thereafter, nano layer is produced. Nano layer and second sacrificial layers are removed from horizontal sections of first sacrificial layer. Nano layer is removed from etched window bottom and first sacrificial layer is removed.
EFFECT: making semiconductor, dielectric, metal and other layers at standard equipment for produced integrated circuit boards.
15 cl, 5 dwg
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