FIELD: electricity.
SUBSTANCE: in the method to restore a threshold voltage of MIS-transistor structures an induced positive charge formed as a result of ion-beam etching process during formation of structure metal layers, is neutralised by photoemission of electrons during additional radiation of plates by a source of near ultraviolet with energy of quanta equal to 4.0÷6.0 eV within 15÷20 min.
EFFECT: neutralisation of induced charge in process of plasma treatments during formation of metallisation of MIS transistor structures, restoration of threshold voltages, stabilisation of charging properties and increased percentage of good items yield and higher reliability.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
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|
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