METHOD OF PRODUCING A SILICON POROUS MEMBRANE Russian patent published in 2019 - IPC H01L21/302 B82B3/00 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to semiconductor technology and can be used in making electronic devices in which a porous integrated membrane is required: gas filters in selective gas sensors, gas flow velocity sensors, fuel cells, etc. Method of producing a silicon porous membrane in a monolithic frame includes forming a porous layer by an anode etching of a silicon plate, opening the porous layer from the back side of the silicon plate by mechanical thinning, removing the upper layer with low porosity by ion sputtering with Ar+ ions. Porous layer of silicon plate is formed by anode etching in electrolyte of composition HF:(CH₃)₂CO in volume ratio of 1:(2–4), and removal of fine silicon from the bottom of the well on the back side is carried out by ion sputtering with Ar+ ions. Formation of porous layer by anode etching of silicon plate is carried out in single-chamber cell, silicon plates during illumination of anode are illuminated with incandescent lamp from above.

EFFECT: creation of mechanically strong silicon porous membranes in monolithic frame with varied dimensions of membrane thickness and pore diameters.

3 cl, 1 tbl, 3 dwg