METHOD OF OBTAINING LAYER OF POLYCRYSTALLINE SILICON Russian patent published in 2011 - IPC H01L21/268 B82B3/00 

FIELD: physics.

SUBSTANCE: in the method of obtaining a layer of polycrystalline silicon on a glass or silicon substrate with a silicon dioxide layer, the silicon amorphous layer undergoes crystallisation via laser treatment. Pulsed radiation with duration of 30-120 femtoseconds with wavelength and energy density which cause phase transition in the amorphous silicon to form a layer of polycrystalline silicon is used. Crystallisation phase transition is stimulated by electron-hole plasma and is characterised by absence of energy transfer to the substrate. Treatment is carried out using radiation with wavelength in the near ultraviolet or near infrared range, which corresponds to the second or first harmonic of a titanium-sapphire laser. The value of the average wavelength of ration selected from 390 to 810 nm provides absorption on the entire thickness of the layer of amorphous silicon. Energy density from 20 to 150 mJ/cm² at given thickness of the amorphous silicon from 20 to 130 nm ensures formation of a solid polycrystalline layer on the area exposed to radiation.

EFFECT: wider range of device structures with a layer of polycrystalline silicon and wider range of thickness of initial films of amorphous silicon.

11 cl, 5 dwg