METHOD OF MAKING DIELECTRIC LAYER CONTAINING NANOCRYSTALS Russian patent published in 2010 - IPC H01L21/326 B82B3/00 

FIELD: physics.

SUBSTANCE: in the method of making a dielectric layer containing nanocrystals, an initial dielectric film containing material for forming nanocrystals is made on a substrate. The initial dielectric film undergoes laser treatment which causes aggregation of the material for forming nanocrystals in the said film and, consequently, formation of the nanocrystals. Pulsed radiation with pulse duration and energy density which enable crystallisation phase transition is used during laser treatment, where the said phase transition is stimulated by the electron-hole plasma without transmission of energy to the dielectric lattice, with average radiation wavelength which ensures absorption on the entire thickness of the initial film.

EFFECT: wider range of substrates and initial dielectric films for making device structures.

9 cl, 4 dwg, 7 ex