METHOD OF PRODUCING MONOCRYSTALLINE SiC Russian patent published in 2010 - IPC C30B23/00 C30B29/36 

FIELD: physics.

SUBSTANCE: method of producing monocrystalline SiC involves sublimation of a source of SiC 9 placed in a crucible onto a substrate made from a seed crystal of SiC 8 when the vapour phase passes from the source of SiC 9 through a barrier carbon catcher (BCC). The BCC used is less than two overlapping plates 10, 11 made from heat-resistant material (graphite, tantalum or niobium) and which lie in parallel to the base of the crucible such that h=(0.2-0.6)·d·(I-γ), where h is the distance between the overlapping plates, mm; d is the diametre of the crucible, mm; γ is the overlap ratio (the ratio of the area covered by neighbouring plates to the area of the crucible), equal to 0.5-0.8.

EFFECT: higher rate of growth of SiC with high quality of the desired product.

4 cl, 1 tbl, 3 dwg