METHOD OF OBTAINING MONOCRYSTALLINE SiC Russian patent published in 2015 - IPC C30B23/00 C30B29/36 

FIELD: chemistry.

SUBSTANCE: method includes the sublimation of a SiC source, placed in a crucible, on a plate of an inoculation SiC monocrystal, placed on a holder, with the holder being made in the form of a flat ring from an elastic soft material, values of elastic moduli of which are smaller than the values of elastic moduli of the monocrystalline SiC; on the plate of the inoculation SiC monocrystal applied is, at least, one protective layer, which ensures the thermo-chemical stability of the said surface and consisting of synthetic resins, an adhesive and a solvent; the plate of the inoculation SiC monocrystal is fastened to the holder from the side of the applied layer, completely closing the area, limited by the internal lateral surface of the holder ring, with the formation of the surface of the inoculation SiC monocrystal plate, not intended for growing a monocrystalline SiC ingot, on which additionally applied are some layers, ensuring specified temperature conditions on surfaces of the inoculation SiC monocrystal plate and consisting of a carbon suspension with the addition of a solvent and plasticisers; after that, the holder with the fastened on it inoculation SiC monocrystal plate is installed in the crucible in such a way that the surface of the plate, intended for growing the monocrystalline SiC ingot, is directed inside the crucible and contacts a gas medium inside the crucible in the process of sublimation.

EFFECT: method makes it possible to improve the quality of growing the SiC ingot as a result of the reduction of mechanical tensions in the plate of the inoculation SiC monocrystal in the process of growing the monocrystalline ingot.

4 cl, 4 dwg, 1 tbl