METHOD OF PRODUCING MONOCRYSTALLINE SIC Russian patent published in 2020 - IPC H01L21/36 

FIELD: technological processes.

SUBSTANCE: invention can be used to produce SiC monocrystals. Method involves sublimation of a silicon carbide source onto a SiC base crystal plate in the presence of a film of high-melting metal carbide, which is arranged parallel thereto in the inner volume of the growth crucible, before the sublimation, sublimation is carried out in a growth crucible made composite of two hermetically connected parts, upper part of which is made with smaller diameter of inner cavity D₁, is intended for arrangement of plate of seed monocrystal of SiC and ingot of monocrystalline SiC, and lower, with larger diameter of inner cavity D₂, - for arrangement of silicon carbide source and film from refractory metal carbide, at that, in lower part of composite crucible at distance H from surface of connection of parts of composite crucible there is a plate from porous graphite with average size of pores P, on which on the side facing the plate of seed SiC monocrystal and coaxial to it, previously produced film of refractory metal carbide with diameter D₃≥D₁+2H and thickness H₃≤P.

EFFECT: improving quality of grown ingots of monocrystalline silicon carbide.

10 cl, 6 dwg