LIGHT-EMITTING SEMICONDUCTOR HETEROSTRUCTURE Russian patent published in 2007 - IPC H01L33/00 

FIELD: semiconductor devices and structures.

SUBSTANCE: proposed light-emitting semiconductor heterostructure built around nitride solid solutions of third-group metals Al_xIn_yGa_{1 - (x + y)}N (0 ≤ x ≤1, 0 ≤ y ≤1) with p-n junction has series of epitaxial layers firming p and n regions. Active area is formed in one of these regions that has at least one quantum well and other region has current-limiting layer. Active area is disposed within p region and current limiting layer, in n region.

EFFECT: enhanced external quantum efficiency.

3 cl, 2 dwg