SEMICONDUCTOR ELEMENT EMITTING LIGHT IN VISIBLE-SPECTRUM BLUE REGION Russian patent published in 2006 - IPC H01L33/00 H01S5/34 

FIELD: semiconductor light-emitting devices such as diodes.

SUBSTANCE: proposed invention relates, in particular, to light-emitting diodes built around broadband compounds of A^IIIB^V type that function to emit light in blue region of visible spectrum whose wavelength is 450 - 500 nm. Element structure incorporates substrate, buffer layer made of nitride material, n-contact layer made of Si-doped GaN, active layer with two or more quantum wells made of In_xGa_{1 - x}N, and barriers separating these wells and made of Si-doped nitride material, emitter layer made of Mg-doped Al_YGa_{1 - y}N, and p-contact layer made of Mg-doped nitride material. Molar fraction of indium X linearly reduces in In_xGa_{1 - x}N through thickness of quantum wells from 0.35 to 0.1 toward n-contact layer. Molar fraction of aluminum Y in emitter layer composition linearly reduces from its maximum value of 0.3 + Z on emitter layer surface bordering the active layer to Z on emitter layer surface bordering p-contact layer, where Z is molar fraction of aluminum in p-contact layer composition using Al_ZGa_{1 - Z}N as nitride material, where 0 ≤ Z ≤ 0.1. Active layer is doped with Si, where Si concentration is minimum 5 x 10¹⁸cm^-1; thickness "h₁" of active-layer quantum wells is 1.5 ≤ h₁ ≤ 3 nm; thickness "h₂" of barriers separating quantum wells is 5 ≤ h₂ ≤ 15 nm, and thickness "h_c" of emitter layer is 10 ≤ h_c ≤ 30 nm.

EFFECT: enhanced efficiency of light-emitting diodes.

1 cl, 1 dwg, 1 tbl