FIELD: electricity.
SUBSTANCE: operations of process chamber pumping, supply of oxygen, creation of plasma by electron beam coming in vicinity from object surface are performed in method of plasma anodisation for metal or semiconductive object. Hollow cathode is located opposite anodised object; negative voltage of 20-50 V is supplied to it and anodising is performed at pressure of oxygen of 5÷20 Pa.
EFFECT: increase in rate of oxygen layer growth at surface of metal or semiconductive objects at preservation of defect-free structure of layers.
1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURE BASED ON AB COMPOUNDS AND ITS FORMATION METHOD | 2010 |
|
RU2420828C1 |
| METHOD OF AMORPHOUS OXIDE OF ALUMINUM COATING BY REACTIVE EVAPORATION OF ALUMINUM IN LOW PRESSURE DISCHARGE | 2016 |
|
RU2653399C2 |
| METHOD FOR PRODUCING OF MIS STRUCTURES ON BASIS OF InAs | 2015 |
|
RU2611690C1 |
| METHOD FOR PLASMOCHEMICAL ETCHING OF SEMICONDUCTOR AND INSULATING MATERIALS | 2006 |
|
RU2316845C1 |
| METHOD AND APPARATUS FOR PLASMA TREATMENT OF PIECES | 1993 |
|
RU2063472C1 |
| SOURCE OF FAST NEUTRAL ATOMS | 2008 |
|
RU2373603C1 |
| METHOD FOR DEPOSITION OF THIN-FILM COATINGS ON SURFACE OF SEMICONDUCTOR HETEROEPITAXIAL STRUCTURES BY MAGNETRON SPUTTERING | 2015 |
|
RU2601903C2 |
| METHOD FOR REMOVING OVER-SPRAYED HYDROCARBON LAYERS | 2017 |
|
RU2669864C1 |
| PRODUCTION OF COATING FROM TITANIUM NITRIDE AT CARBIDE INSERTS IN GLOW DISCHARGE WITH HOLLOW CATHODE EFFECT | 2014 |
|
RU2574157C1 |
| METHOD OF SOLID VOLUMERIC IMPULSE PLASMA GENERATION | 2016 |
|
RU2632927C2 |
