METHOD FOR DEPOSITION OF THIN-FILM COATINGS ON SURFACE OF SEMICONDUCTOR HETEROEPITAXIAL STRUCTURES BY MAGNETRON SPUTTERING Russian patent published in 2016 - IPC C23C14/35 H01J37/317 H01J37/34 

FIELD: physics.

SUBSTANCE: proposed method comprises generating in a known magnetron sputtering system of planar type a magnetic field, igniting a discharge in crossed electric and magnetic fields, sputtering a cathode material and its deposition on the surface of a semiconductor heteroepitaxial structure. Between the magnetron source and the semiconductor heteroepitaxial structure there is a magnetic system deflecting passing through it high-energy charged particles of gas discharge plasma. Magnetic system deflecting passing through it high-energy charged particles of gas discharge plasma can be made in the form of a rectangular steel housing with fixed in it on two opposite sides magnets in such a way, that created by them magnetic field in the inner part of the system is directed perpendicular to the movement of atoms deposited on the surface of the semiconductor heteroepitaxial structure.

EFFECT: provide is deviation by the magnetic system during sputtering of high-energy charged particles from the surface of the semiconductor heteroepitaxial structure to prevent its bombardment and, consequently, formation of radiation defects in it.

1 cl, 1 dwg