FIELD: metallurgy.
SUBSTANCE: in method for obtaining porous film of silicon dioxide of nanometric thickness the film of silicon dioxide is modified with carbon by adding graphite discs to silicon target during magnetron diffusion; formation of pores is performed during execution of chemical reaction of carbon with oxygen on the substrate at the stage of formation of dielectric film. Invention provides obtaining of porous layers of silicon dioxide with various pore concentration.
EFFECT: formed film has high adsorption capacity, which allows using it in gas sensors.
3 dwg
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