METHOD OF PRODUCING HIGH-ENTROPY THIN FILM ON DIELECTRIC SUBSTRATE Russian patent published in 2024 - IPC C23C14/35 

FIELD: various technological processes.

SUBSTANCE: invention relates to a method of producing a high-entropy thin film on a dielectric substrate. Target is formed by hot isostatic pressing on the basis of powders of Co, Cr, Fe, Ni metals pre-mixed in rolls or planetary mill with addition of the fifth element from Ti, Al, Mn, Cu, Zn, Mg, Sc, Ag, Au, Pd, Cd, Mo, Pt, Ge, In, Ga, Li, Si, V, W, Nb, Ta, Zr, Hf. Hot isostatic pressing is carried out at temperature of 900-1,200 °C, holding time 30-180 min and pressure 30-50 MPa, in argon gas flow not less than 2 l/min. Obtained target is then ground and placed in a DC magnetron at distance of 80-100 mm from the dielectric substrate. Thin film is magnetron sputtered at power 200-1,000 W, pressure in magnetron chamber is not more than 0.5 Pa and sputtering time is 30-800 seconds, followed by annealing in vacuum furnace at temperature of 200-400 °C for 2-4 hours.

EFFECT: higher quality of film deposited on dielectric substrate due to use of powder target obtained by hot isostatic pressing, as well as optimization of sputtering modes in magnetron.

1 cl, 4 dwg, 1 tbl