METHOD OF DIELECTRIC LAYER MANUFACTURING Russian patent published in 2013 - IPC H01L21/318 

Abstract RU 2498445 C2

FIELD: electricity.

SUBSTANCE: in this method dielectric layer is set to substrate from gas mixture containing components required to form dielectric material - silicone oxynitride. The gas mixture in non-isothermal mode passes through the heated spiral made of carbon material and characterised by the developed surface. A layer of silicone oxynitride with required thickness is formed, at that its content of oxygen and nitrogen must ensure compensation of internal mechanical stresses.

EFFECT: receiving dielectric layers that provide limit parameters of bolometer sensitivity, control value of internal mechanical stresses in the membrane dielectric layer, conform coating of relief grades.

6 cl

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RU 2 498 445 C2

Authors

Mikhajlovskij Igor' Petrovich

Fomin Boris Ivanovich

Dem'Janenko Mikhail Alekseevich

Ovsjuk Viktor Nikolaevich

Gavrilova Tat'Jana Aleksandrovna

Dates

2013-11-10Published

2011-12-19Filed