METHOD FOR INCREASING RADIATION RESISTANCE OF DEVICES BASED ON GALLIUM ARSENIDE Russian patent published in 2007 - IPC H01L21/263 

FIELD: electronic engineering, possible use when manufacturing devices based on gallium arsenide.

SUBSTANCE: in the method for increasing radiation resistance of devices based on gallium arsenide, including manufacture of devices and performing of thermal processing, after manufacture devices are irradiated with a fluence of fast neutrons in range from 1·10¹³ neutron/cm², to F_nmax, determined from formula neutron/cm², where F_nmax - maximal value of neutron fluence; - allowed level of alteration of starting electron concentration in active zone of device; n₀, n_F - concentration of electrons in active area of device before and after irradiation, respectively cm^-3; and after irradiation current training is performed in continuous power mode at a temperature of 85±5°C during 10-24 hours.

EFFECT: increased resistance of devices based on gallium arsenide to irradiation by electrons and gamma-quanta.

1 dwg